Formation of the Z1,2 deep-level defects in 4H-SiC epitaxial layers: Evidence for nitrogen participation

Applied Physics Letters

Volumn 81, Issue 25, 2003, Pages 4841-4843

  Pintilie, I ^a,c   Pintilie, L ^a,c   Irmscher, K ^a   Thomas, B ^b  

^a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

^b SiCED Electronics Development GmbH and Co KG   (Germany)

^c NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; NITROGEN; PRECIPITATION (CHEMICAL); SILICON CARBIDE; SPECTROSCOPIC ANALYSIS;

EPITAXIAL LAYERS;

EPITAXIAL GROWTH;

EID: 0037449336     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1529314     Document Type: Article

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