Schottky barrier rectifier with high current density using vanadium as barrier metal

Applied Physics Letters

Volumn 79, Issue 6, 2001, Pages 860-862

  Kim, J S ^a   Choi, H H ^b   Son, S H ^b   Choi, S Y ^b  

^a KEC ^*  (South Korea)

^b Kyungpook National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0039782194     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1391402     Document Type: Article

References (5)

1. F. Broun, Ann. Phys. Chem. 153, 556 (1874).
2. J. C. Bose, US Patent No. 755, 840 (1904).
3. B. J. Baliga, IEEE Trans. Electron Devices 43, 1717 (1996).
4. S. M. Sze, Physics of Semiconductor Devices (Wiley-Interscience, New York, 1981), pp. 248-288.
5. B. J. Baliga, Power Semiconductor Devices (PWS, Boston, 1995), pp. 128-150.