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Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 18, Issue 4 I, 2000, Pages 1135-1138

High breakdown voltage Au/Pt/GaN Schottky diodes

(13) Dang, G T a Zhang, A P a Mshewa, M M a Ren, F a Chyi, J I d Lee, C M d Chuo, C C d Chi, G C d Han, J b Chu, S N G c Wilson, R G d Cao, X A a Pearton, S J a

a University of Florida (United States)

b SANDIA NATIONAL LABORATORIES (United States)

c LUCENT TECHNOLOGIES (United States)

d NONE

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN OF SOLIDS; GOLD; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PLATINUM; SEMICONDUCTING GALLIUM COMPOUNDS; SOLID STATE RECTIFIERS;

GALLIUM NITRIDE; REVERSE LEAKAGE CURRENTS;

SCHOTTKY BARRIER DIODES;

EID: 0034227698 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.582312 Document Type: Article

Times cited : (25)

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