Interfacial reactions of Ti/n-GaN contacts at elevated temperature

Journal of Applied Physics

Volumn 94, Issue 1, 2003, Pages 245-253

  Lu, C J ^a,b   Davydov, A V ^a   Josell, D ^a   Bendersky, L A ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b HUBEI UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONTACTS; ELECTRIC PROPERTIES; ELECTRON DIFFRACTION; EVAPORATION; GALLIUM NITRIDE; HYDROGEN; INTERFACES (MATERIALS); PHASE TRANSITIONS; RAPID THERMAL ANNEALING; SURFACE REACTIONS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

VOIDS;

TITANIUM;

EID: 0042341744     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1579128     Document Type: Article

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