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Volumn 149, Issue 7, 2002, Pages

The variation of ohmic contacts and surface characteristics on p-GaN induced by reactive ion etching

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON CYCLOTRON RESONANCE; OHMIC CONTACTS; PHOTOLUMINESCENCE; PLASMA APPLICATIONS; RAPID THERMAL ANNEALING; REACTIVE ION ETCHING; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 0036641490     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1479161     Document Type: Article
Times cited : (24)

References (15)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.