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Volumn 149, Issue 7, 2002, Pages
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The variation of ohmic contacts and surface characteristics on p-GaN induced by reactive ion etching
a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
CURRENT VOLTAGE CHARACTERISTICS;
ELECTRON CYCLOTRON RESONANCE;
OHMIC CONTACTS;
PHOTOLUMINESCENCE;
PLASMA APPLICATIONS;
RAPID THERMAL ANNEALING;
REACTIVE ION ETCHING;
X RAY DIFFRACTION ANALYSIS;
X RAY PHOTOELECTRON SPECTROSCOPY;
PLASMA TREATMENT;
GALLIUM NITRIDE;
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EID: 0036641490
PISSN: 00134651
EISSN: None
Source Type: Journal
DOI: 10.1149/1.1479161 Document Type: Article |
Times cited : (24)
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References (15)
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