A numerical study of scaling issues for trench power MOSFETs

Solid-State Electronics

Volumn 49, Issue 6, 2005, Pages 965-975

  Roig, J ^a   Cortes I ^a   Jimenez D ^b   Flores, D ^a   Iniguez B ^c   Hidalgo, S ^a   Rebollo, J ^a  

^a INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^b UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^c UNIVERSITAT ROVIRA I VIRGILI   (Spain)

Author keywords

Double gate devices; Gate drain charge; Power MOSFETs; Trench semiconductor devices

Indexed keywords

AUTOMOTIVE ENGINEERING; BIPOLAR TRANSISTORS; CAPACITANCE; COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRIC RESISTANCE; GATES (TRANSISTOR); PORTABLE EQUIPMENT; RELIABILITY; THRESHOLD VOLTAGE; VOLTAGE REGULATORS;

DOUBLE-GATE DEVICES; GATE-DRAIN CHARGE; POWER MOSFET; TRENCH SEMICONDUCTOR DEVICES;

MOSFET DEVICES;

EID: 18844444242     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.03.026     Document Type: Article

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