The impact of trench geometry and processing on the performance and reliability of low voltage power UMOSFETs

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2001, Pages 308-314

  Suliman, S A ^a   Gallogunta, N ^a   Trabzon, L ^a   Hao, J ^a   Dolny, G ^a   Ridley, R ^a   Grebs, T ^a   Benjamin, J ^a   Kocon, C ^a   Zeng, J ^a   Knoedler, C M ^a   Horn, M ^a   Awadelkarim, O O ^a   Fonash, S J ^a   Ruzyllo, J ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

Channel doping; Charge pumping; Fowler Nordheim stress; Gate oxide growth; Hot electron reliability; Plasma damage; Power transistors; UMOSFETs

Indexed keywords

CARRIER MOBILITY; GATES (TRANSISTOR); HOT CARRIERS; INTERFACES (MATERIALS); OXIDES; REACTIVE ION ETCHING; RELIABILITY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING BORON; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING;

ELECTRICAL STRESSING; HOT ELECTRON STRESS RELIABILITY; LOW VOLTAGE POWER UMOSFET;

MOSFET DEVICES;

EID: 0035003546     PISSN: 00999512     EISSN: None     Source Type: Journal    
DOI: 10.1109/RELPHY.2001.922920     Document Type: Article

References (18)

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