메뉴 건너뛰기




Volumn , Issue , 2003, Pages 15-21

Next-generation semiconductors for DC-to-DC converters

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POWER SUPPLIES TO APPARATUS; GATES (TRANSISTOR); MOSFET DEVICES; POWER INTEGRATED CIRCUITS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR SWITCHES;

EID: 1042289145     PISSN: 10889299     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/bipol.2003.1274927     Document Type: Conference Paper
Times cited : (3)

References (38)
  • 1
    • 0036439883 scopus 로고    scopus 로고
    • The emergence & impact of DRAM-Fab reuse in analog and power-management integrated circuits
    • R. K. Williams and Michael Cornell "The emergence & impact of DRAM-Fab reuse in analog and power-management integrated circuits" BCTM 2002, pp. 45.
    • BCTM 2002 , pp. 45
    • Williams, R.K.1    Cornell, M.2
  • 2
    • 0041438372 scopus 로고    scopus 로고
    • The earth is mobile
    • T. Efland "The earth is mobile" ISPSD 2003, pp. 2.
    • ISPSD 2003 , pp. 2
    • Efland, T.1
  • 3
    • 1042268640 scopus 로고
    • Distributed power takes center stage
    • April
    • C. H. Small "Distributed power takes center stage" EDN, April, 1994.
    • (1994) EDN
    • Small, C.H.1
  • 5
    • 1042291769 scopus 로고    scopus 로고
    • ITRS International Technology Roadmap for Semiconductors 2002 update
    • ITRS International Technology Roadmap for Semiconductors 2002 update
  • 6
    • 0004208995 scopus 로고    scopus 로고
    • Smart power ICs technologies and applications
    • Springer Verlag, Berlin
    • B. Murari, F. Bertotti, G. Vignola "Smart Power ICs Technologies and Applications" Springer Verlag, Berlin, 1996.
    • (1996)
    • Murari, B.1    Bertotti, F.2    Vignola, G.3
  • 7
    • 24844480080 scopus 로고    scopus 로고
    • Cdv/dt induced turn-on in synchronous buck regulators
    • International Rectifier
    • T. Wu "Cdv/dt induced turn-on in synchronous buck regulators" International Rectifier.
    • Wu, T.1
  • 8
    • 0003483008 scopus 로고    scopus 로고
    • Power MOSFETs: Theory and applications
    • John Wiley & Sons
    • D.A. Grant and J. Gowar "Power MOSFETs: Theory and Applications" John Wiley & Sons.
    • Grant, D.A.1    Gowar, J.2
  • 9
    • 0030110580 scopus 로고    scopus 로고
    • Synchronous rectification: Improving the efficiency of buck converter
    • March
    • J.D Sherman and M Walters "Synchronous rectification: improving the efficiency of buck converter" EDN, March 1996.
    • (1996) EDN
    • Sherman, J.D.1    Walters, M.2
  • 10
    • 0003218273 scopus 로고    scopus 로고
    • Investigation of candidate VRM topologies for future microprocessors
    • X. Zhou et. al. "Investigation of candidate VRM topologies for future microprocessors" IEEE APEC, 1998.
    • (1998) IEEE APEC
    • Zhou, X.1
  • 11
    • 1042291767 scopus 로고    scopus 로고
    • PIP202 dc-dc converter power train
    • Philips semiconductors
    • "PIP202 dc-dc converter power train" Philips semiconductors
  • 12
    • 0036045274 scopus 로고    scopus 로고
    • A 3V to 6v In, 6A out synchronous buck PWM integrated FET switcher design uses state-of-art power IC technology
    • D. Grant et. al. "A 3V to 6v In, 6A Out synchronous Buck PWM integrated FET switcher design uses state-of-art power IC technology" ISPSD, 2002, pp. 213.
    • ISPSD, 2002 , pp. 213
    • Grant, D.1
  • 13
    • 0021787429 scopus 로고
    • A new vertical power MOSFET structure with extremly reduced on-resistance
    • D. Ueda et. al. "A new vertical power MOSFET structure with extremly reduced on-resistance" IEEE Trans. Electron Devices, 1985, ED-32, pp.2
    • (1985) IEEE Trans. Electron Devices , vol.ED-32 , pp. 2
    • Ueda, D.1
  • 14
    • 0036049980 scopus 로고    scopus 로고
    • Fully self-aligned power trench-MOSFET utilizing 1 μm pitch and 0.2 μm trench width
    • S. Peake et. al "Fully self-aligned power trench-MOSFET utilizing 1 μm pitch and 0.2 μm trench width" ISPSD 2002, pp.29
    • ISPSD 2002 , pp. 29
    • Peake, S.1
  • 15
    • 0036048350 scopus 로고    scopus 로고
    • Switching performance of low-voltage N-channel trench MOSFETs
    • R.J.E. Hueting, et al. "Switching Performance of low-voltage N-channel Trench MOSFETs" ISPSD Proceedings, June 2002, pp. 177.
    • ISPSD Proceedings, June 2002 , pp. 177
    • Hueting, R.J.E.1
  • 16
  • 17
    • 1042268641 scopus 로고
    • Grooved DMOS process with varying gate dielectric thickness
    • R. A. Blanchard et al. "Grooved DMOS process with varying gate dielectric thickness" US patent 4,914,058 1990.
    • (1990) US Patent 4,914,058
    • Blanchard, R.A.1
  • 18
    • 1042280105 scopus 로고    scopus 로고
    • Double gate-oxide for reducing gate-drain capacitance in trenched DMOS with high-dopant concentration buried-region under trenched gate
    • F.I. Hshieh "Double gate-oxide for reducing gate-drain capacitance in trenched DMOS with high-dopant concentration buried-region under trenched gate" US patent 6,262,453 2001.
    • (2001) US Patent 6,262,453
    • Hshieh, F.I.1
  • 19
    • 1042303381 scopus 로고    scopus 로고
    • MOSFET technology advances dc-dc converter efficiency for processor power
    • N. Thapar et. al. "MOSFET technology advances dc-dc converter efficiency for processor power" PCIM 2001.
    • PCIM 2001
    • Thapar, N.1
  • 20
    • 1042303380 scopus 로고    scopus 로고
    • Patents Pending
    • M. Darwish et al. Patents Pending.
    • Darwish, M.1
  • 21
    • 0041438343 scopus 로고    scopus 로고
    • A new power W-gated trench MOSFET (WMOSFET) with high switching performance
    • M. Darwish et al. "A New Power W-Gated Trench MOSFET (WMOSFET) with high Switching Performance" ISPSD 2003, pp. 24
    • ISPSD 2003 , pp. 24
    • Darwish, M.1
  • 22
    • 0032598906 scopus 로고    scopus 로고
    • Integrated design environment for dc/dc converter FET optimization
    • Ritu Sodhi et al "Integrated design environment for dc/dc converter FET optimization" ISPSD, 1999, pp. 241
    • (1999) ISPSD , pp. 241
    • Sodhi, R.1
  • 23
    • 0042515268 scopus 로고    scopus 로고
    • The impact of sub-threshold current on ultra high density trench MOSFET for synchronous rectifier application
    • N. X. Sun and A. Q. Huang "The impact of sub-threshold current on ultra high density trench MOSFET for synchronous rectifier application" ISPSD 2003, pp. 358.
    • ISPSD 2003 , pp. 358
    • Sun, N.X.1    Huang, A.Q.2
  • 24
    • 0004005306 scopus 로고    scopus 로고
    • Physics of semiconductor devices
    • John Wiley & Son
    • S. Sze "Physics of Semiconductor Devices" John Wiley & Son.
    • Sze, S.1
  • 25
    • 0029290257 scopus 로고
    • Trench MOS barrier Schottky (TMBS) rectifier: A Schottky rectifier with higher than parallel plan breakdown voltage
    • M. Mehrotra and B. J. Baliga "Trench MOS barrier Schottky (TMBS) rectifier: A Schottky rectifier with higher than parallel plan breakdown voltage", Solid state Electronics, Vol. 38, No 4, pp. 801, 1995.
    • (1995) Solid State Electronics , vol.38 , Issue.4 , pp. 801
    • Mehrotra, M.1    Baliga, B.J.2
  • 28
    • 1042291764 scopus 로고    scopus 로고
    • Increased efficiency and improved reliability in "Oring" functions using trench schottky technology
    • D. Chiola et. al. "Increased efficiency and improved reliability in "Oring" functions using trench schottky technology" PCIM Europe, 2002.
    • PCIM Europe, 2002
    • Chiola, D.1
  • 29
    • 1042268630 scopus 로고    scopus 로고
    • Trench MOS barrier Schottky diode
    • Vishay-Siliconix Internal Report
    • J. Korec "Trench MOS Barrier Schottky Diode" Vishay-Siliconix Internal Report.
    • Korec, J.1
  • 30
    • 1042291762 scopus 로고    scopus 로고
    • Monolithically integrated trench MOSFET and Schottky diode
    • S. P. Sapp "Monolithically integrated trench MOSFET and Schottky diode" US Patent 6,351,018 B1, 2002.
    • (2002) US Patent 6,351,018 B1
    • Sapp, S.P.1
  • 31
    • 0042468951 scopus 로고    scopus 로고
    • Roadmap differentiation and emerging trends in BCD technology
    • C. Contiero et. al. "Roadmap differentiation and emerging trends in BCD technology" ESSDERC, 2002, pp. 275.
    • ESSDERC, 2002 , pp. 275
    • Contiero, C.1
  • 32
    • 0029544640 scopus 로고    scopus 로고
    • Smart power technology and the evolution from protective umbrella to complete system
    • B. Murari "Smart power technology and the evolution from protective umbrella to complete system" IEDM 1195, pp. 95.
    • IEDM 1195 , pp. 95
    • Murari, B.1
  • 33
    • 1042268639 scopus 로고    scopus 로고
    • Predictive control maximizes synchronous rectifier efficiency
    • May
    • S. Mappus "Predictive Control maximizes synchronous rectifier efficiency" Power Electronics Technology, May 2003, pp. 44
    • (2003) Power Electronics Technology , pp. 44
    • Mappus, S.1
  • 34
    • 0032257650 scopus 로고    scopus 로고
    • Lateral thinking about power devices
    • T. Efland et. al. "Lateral thinking about power devices" IEDM, 1998, pp. 679.
    • (1998) IEDM , pp. 679
    • Efland, T.1
  • 35
    • 24844452959 scopus 로고    scopus 로고
    • A high current power IC technology using trench DMOS power device
    • S. Mukherjee et. al. "A high current power IC technology using trench DMOS power device" IEDM 1991, pp. 145
    • IEDM 1991 , pp. 145
    • Mukherjee, S.1
  • 36
    • 0036442257 scopus 로고    scopus 로고
    • A trench-isolated power BiCMOS process with complementary high performance verical bipolars
    • A. Strachan, et a.. "A trench-isolated power BiCMOS process with complementary high performance verical bipolars" BCTM, 2002, pp. 41
    • (2002) BCTM , pp. 41
    • Strachan, A.1
  • 37
    • 0036045159 scopus 로고    scopus 로고
    • Integration of multi-voltage analog and power devices in 0.25 μm CMOS + flash memory process
    • E. de Fresart et. al. "Integration of multi-voltage analog and power devices in 0.25 μm CMOS + flash memory process" ISPSD, 2002, pp. 305.
    • ISPSD, 2002 , pp. 305
    • De Fresart, E.1
  • 38
    • 1042291755 scopus 로고    scopus 로고
    • High performance stepdown dc-dc converter with dynamically adjustable output voltage
    • AN 731 Vishay-Siliconix
    • R. Nasir and W. McDaniel "High performance stepdown dc-dc converter with dynamically adjustable output voltage" AN 731 Vishay-Siliconix
    • Nasir, R.1    McDaniel, W.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.