Optimum design for minimum on-resistance of low voltage trench power MOSFET

Microelectronics Journal

Volumn 35, Issue 3, 2004, Pages 287-289

  Hong, Ji Hoon ^a   Chung, Sang Koo ^a   Choi, Yearn Ik ^a  

^a Ajou University   (South Korea)

Author keywords

On resistance; Trench MOSFET; Trench width

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; ELECTRIC FIELDS; ELECTRIC IMPEDANCE; ELECTRIC RESISTANCE; ELECTRON MOBILITY; NUMERICAL METHODS; PERMITTIVITY; THRESHOLD VOLTAGE;

ACCUMULATION RESISTANCE; ON-RESISTANCE; POWER LOSSES; TRENCH MOSFET; TRENCH WIDTH;

MOSFET DEVICES;

EID: 0742320771     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(03)00193-9     Document Type: Conference Paper

References (3)

1. Hu C., Chi M., Patel V.M. IEEE Trans. Electron Devices. ED-31:(12):1984;1693.
2. Ueda D., Takagi H., Kano G. IEEE Trans. Electron Devices. ED-32:(1):1984;2.
3. Sun S.C., Plummer J.D. IEEE Trans. Electron Devices. ED-27:(2):1980;356.