30-V P-channel trench gated DMOSFET with 900 μΩ-cm2 specific on-resistance at 2.7 V

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Volumn , Issue , 1996, Pages 53-56

  Williams, Richard K ^a   Grabowski, Wayne ^a   Darwish, Mohamed ^a   Yilmaz, Hamza ^a   Chang, Mike ^a   Owyang, King ^a  

^a Siliconix Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC RESISTANCE MEASUREMENT; GATES (TRANSISTOR); SEMICONDUCTOR DEVICE STRUCTURES;

GATE OXIDE SCALING; TRENCH GATED MOSFETS;

MOSFET DEVICES;

EID: 0029709780     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)