Gate-drain charge analysis for switching in power trench MOSFETs

IEEE Transactions on Electron Devices

Volumn 51, Issue 8, 2004, Pages 1323-1330

  Hueting, Raymond J E ^a   Hijzen, Erwin A ^a   Heringa, Anco ^a   Ludikhuize, Adriaan W ^a   in't Zandt, Micha A A ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRIC RESISTANCE; OPTIMIZATION; POWER CONVERTERS; POWER SUPPLY CIRCUITS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; THRESHOLD VOLTAGE; VOLTAGE REGULATORS;

CHARGE DENSITY; DC-DC POWER CONVERSION; GATE DRAIN CHARGE; POWER MOSFET; TRENCH SEMICONDUCTOR DEVICES; VOLTAGE REGULATOR MODULES;

MOSFET DEVICES;

EID: 3943065749     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.832096     Document Type: Article

References (12)

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