Spatial temperature profiles due to nonuniform self-heating in LDMOS's in thin SOI

IEEE Electron Device Letters

Volumn 18, Issue 1, 1997, Pages 13-15

  Leung, Ying Keung ^b   Kuehne, Stephen C ^b   Huang, Vincent S K ^c   Nguyen, Cuong T ^a,c   Paul, Amit K ^b   Plummer, James D ^a,b   Wong, S Simon ^a,b  

^a IEEE

^b Stanford University   (United States)

^c HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DOPING (ADDITIVES); ELECTRIC HEATING; ENERGY DISSIPATION; RELIABILITY; SILICON ON INSULATOR TECHNOLOGY; TEMPERATURE DISTRIBUTION; TEMPERATURE MEASUREMENT;

DRIFT REGIONS; POWER DISSIPATION PROFILE; RESISTANCE THERMOMETRY TECHNIQUE; SELF HEATING EFFECT; TEMPERATURE PROFILE; TWO DIMENSIONAL ELECTROTHERMAL DEVICE SIMULATION;

MOS DEVICES;

EID: 0030784335     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.553061     Document Type: Article

References (9)

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