The behavior of very high current density power MOSFET's

IEEE Transactions on Electron Devices

Volumn 44, Issue 7, 1997, Pages 1148-1157

  Evans, Jonathan ^a,b   Amaratunga, Gehan ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY;

POWER MOSFET DEVICES;

MOSFET DEVICES;

EID: 0031176038     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.595944     Document Type: Article

References (18)

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