A new power W-gated trench MOSFET (WMOSFET) with high switching performance

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2003, Pages 24-27

  Darwish, Mohamed ^a   Yue, Christiana ^a   Lui, Kam Hong ^a   Giles, Frederick ^a   Chan, Ben ^a   Chen, Kuo In ^a   Pattanayak, Deva ^a   Chen, Qufei ^a   Terrill, Kyle ^a   Owyang, King ^a  

^a Vishay   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; ELECTRIC RESISTANCE; OXIDES; SWITCHING;

OXIDE LAYERS;

MOSFET DEVICES;

EID: 0041438343     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. Richard A. Blanchard et al. US patent 4,914,058 April 3, 1990.
2. Fwu-Iuan Hshieh US patent 6,262,453, Jul 17, 2001.
3. R.J.E Hueting, et al. "Switching Performance of low-voltage N-channel Trench MOSFETs" ISPSD Proceedings, June 2002, pp. 177-180
4. M. Darwish et al. Patents Pending.