30V new fine trench MOSFET with ultra low on-resistance

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2003, Pages 28-31

  Ono, Syotaro ^a   Kawaguchi, Yusuke ^a   Nakagawa, Akio ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; OXIDES; SEMICONDUCTOR DOPING; SUBSTRATES;

TRENCH GATES;

MOSFET DEVICES;

EID: 0041438345     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. Jun Zeng et al "An UltraDense Trench-Gated Power MOSFET Technology Using A Self-Aligned Prosses"ISPSD2002, pp.147-150
2. Steven T.Peake et al. "Fully Self-Aligned Power Trench-MOSFET Utilizing 1 um Pitch and 0.2um Trench Width"IEEE2002, pp29-32
3. B.J.Baliga et al "The Accumulation-Mode Field-Effect Transistor: A New Ultralow On-Resistance MOSFET" IEEE Electron Device Letter, VOL13.8.pp427-429.
4. rd Generation Trench Gate MOSFET"IEEE1999, pp.209-212