Trench gate power MOSFETs with retrograde body profile

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn 16, Issue , 2004, Pages 213-216

  Tsui, Bing Yue ^a   Wu, Ming Da ^a   Gan, Tian Choy ^a   Chou, Hui Hua ^a,b   Wu, Zhi Liang ^a,b   Sune, Ching Tzong ^a,b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b Episil Technologies Inc   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; CAPACITANCE; CHANNEL CAPACITY; DIFFUSION; ELECTRIC BREAKDOWN; ELECTRIC RESISTANCE; SEMICONDUCTOR DOPING;

CHANNEL DOPING; DOPING PROFILES; DRAIN VOLTAGE; TRENCH GATE;

MOSFET DEVICES;

EID: 4944266275     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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7. M. J. Lin, C. W. Liaw, F. L. Chang, and H. C. Cheng, "Characterizing trench-gate power metal-oxide-semiconductor field-effect-transistor with multi-layer dielectrics at the trench bottom", to be published in Jpn. J. Appl. Phys.
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