Hot-carrier degradation phenomena in lateral and vertical DMOS transistors

IEEE Transactions on Electron Devices

Volumn 51, Issue 4, 2004, Pages 623-628

  Moens, Peter ^a   Van Den Bosch, Geert ^b   Groeseneken, Guido ^b,c  

^a ON SEMICONDUCTOR   (United States)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Charge pumping (CP); Hot carrier; Lateral integrated DMOS (LDMOS); Vertical integrated DMOS (VDMOS)

Indexed keywords

DEGRADATION; ELECTRIC CHARGE MEASUREMENT; ELECTRON MOBILITY; HOLE TRAPS; HOT CARRIERS;

CHARGE PUMPING MEASUREMENTS; HOT CARRIER DEGRADATION; HOT CARRIER STRESS; TWO DIMENSIONAL DEVICE SIMULATION;

MOSFET DEVICES;

EID: 1942487830     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.824688     Document Type: Article

References (13)

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