Plasma-enhanced CVD of TiN and Ti using low-pressure and high-density helicon plasma

Thin Solid Films

Volumn 281-282, Issue 1-2, 1996, Pages 155-158

  Tobe, Ryoki ^a   Sekiguchi, Atsushi ^a   Sasaki, Masao ^a   Okada, Osamu ^a   Hosokawa, Naokichi ^a  

^a Canon ANELVA Technix Corporation   (Japan)

Author keywords

Chemical Vapour Deposition (CVD); Plasma processing and deposition; Titanium; Titanium nitride

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL IMPURITIES; ELECTRIC CONDUCTIVITY; HELICONS; PLASMA APPLICATIONS; PLASMA DENSITY; PLASMA SOURCES; PLASMAS; TITANIUM; TITANIUM NITRIDE;

FILM RESISTIVITY; HELICON PLASMA; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RF BIASED POWER; TITANIUM TETRACHLORIDE;

METALLIC FILMS;

EID: 0030219233     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(96)08599-9     Document Type: Article

References (5)

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4. T. Akahori, T. Murakami and Y. Morioka, Proc. 44th Symp. on Semiconductors and Integrated Circuits Technology, The Electrochemical Society of Japan, Electronic Materials Committee, Tokyo, 1993, 31.
5. A. Sekiguchi, R. Tobe, N. Hosakawa, S. Wickramanayaka and Y. Hatanaka, Technical Report of IEICE. SDM92-159, 1993, 9.