Silicon carbide surface oxidation and SiO2/SiC interface formation investigated by soft X-ray synchrotron radiation

Journal of Electron Spectroscopy and Related Phenomena

Volumn 144-147, Issue , 2005, Pages 783-788

  Soukiassian, P ^a   Amy, F ^a  

^a CEA SACLAY   (France)

Author keywords

Core level photoemission spectroscopy; Oxidation and oxides; Polytype; Silicon carbide; Surfaces and interfaces; Synchrotron radiation

Indexed keywords

INTERFACES (MATERIALS); LOW ENERGY ELECTRON DIFFRACTION; OXIDATION; PASSIVATION; PHOTOEMISSION; PHOTONS; SILICA; SPECTROSCOPIC ANALYSIS; SURFACE TREATMENT; SYNCHROTRON RADIATION;

CORE LEVEL PHOTOEMISSION SPECTROSCOPY; OXIDATION AND OXIDES; POLYTYPE; SURFACES AND INTERFACES;

SILICON CARBIDE;

EID: 17444430039     PISSN: 03682048     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.elspec.2005.01.254     Document Type: Conference Paper

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