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Applied Physics Letters

Volumn 74, Issue 10, 1999, Pages 1448-1450

Interfacial differences between SiO2 grown on 6H-SiC and on Si(100)

(5) Jernigan, G G a Stahlbush, R E a Das, M K b Cooper Jr , J A b Lipkin, L A c

a NAVAL RESEARCH LABORATORY (United States)

b Purdue University (United States)

c Arkansas Power Electronics International Inc (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000022061 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.123597 Document Type: Article

Times cited : (43)

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