Irradiation-induced deep levels in silicon

Proceedings - Electrochemical Society

Volumn 5, Issue , 2004, Pages 369-384

  Siemieniec, R ^a   Niedeinostheide, F J ^b   Schulze, H J ^b   Sudkamp W ^c   Kellner Werdehausen, U ^d   Lutz, J ^e  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^b INFINEON TECHNOLOGIES AG   (Germany)

^c Aktiv Sensor GmbH Stahnsdorf   (Germany)

^d Eupec GmbH   (Germany)

^e CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER LIFETIME; FREEWHEELING DIODES (FWD); INDUCED DEFECTS; ION IRRADIATION;

DIODES; ELECTRIC POTENTIAL; ELECTRONS; HELIUM; INSULATED GATE BIPOLAR TRANSISTORS; IRRADIATION; PROTONS; SEMICONDUCTOR DOPING;

SILICON;

EID: 17044373207     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (46)

1. F.Robb, I.Wau and S.Ju, Increasing the Switching Speed of High-Voltage IGBTs, Proc. ISPSD, 251-254, Weimar, 1997
2. T.Nakagawa, K.Satoh, M.Yamamoto, K.Hirasawa and K.Ohta, 8kV/3.6kA Light Triggered Thyristor, Proc. ISPSD, 175-180, Yokohama, 1995
3. J.Lutz, Axial Recombination Centre Technology for Freewheeling Diodes, Proc. EPE, 1502-1506, Trondheim, 1997
4. N.Kaminski, N.Galster, S.Linder, C.Ng and R.Francis, 1200V Merged PIN Schottky Diode with Soft Recovery and Positive Temperature Coefficient, Proc. EPE, Lausanne, 1999
5. W.Wondrak, Erzeugung von Strahlenschäden in Silizium, Ph.D. Thesis University of Frankfurt/M., Frankfurt/M., 1985
6. P.Voss, Thyristor manufactured with low break-over voltage region formed by proton irradiation after thyristor production, German Patent DE2817160, 1989
7. H.Iwamoto, H.Haruguchi, Y.Tomomatsu, J.F.Donlon and E.R.Motto, A new punch through IGBT having a new n-buffer layer, Proc. IAS, 692-699, Phoenix, 1999
8. M.Rüb, M.Bär, F.-J.Niedernostheide, M.Schmitt, H.-J.Schulze, and A.Willmeroth, First study on superjunction high-voltage transistors with n-columns formed by proton implantation and annealing, Proc. ISPSD'04, 181-184, Kitakyushu, 2004
9. M.Schmitt, H.-J.Schulze, A.Schlögl, M.Vossebürger, A.Willmeroth, G.Deboy and G.Wachutka, A Comparison of Electron, Proton and Helium Ion Irradiation for the Optimization of the CoolMOS™ Body Diode, Proc. ISPSD, 229-232, Santa Fe, 2002
10. M.Takei, T.Naito and K.Ueno, The Reverse Blocking IGBT for Matrix Converter With Ultra-Thin Wafer Technology, Proc. ISPSD, 156-159, Cambridge, 2003
11. R.Siemieniec, R.Herzer, M.Netzel and J.Lutz, Application of Carrier Lifetime Control by Irradiation to 1.2kV NPT IGBTs, Proc. MIEL, 167-170, Niŝ, 2004
12. H.-J. Schulze and H. Mitlehner, Improved blocking voltage of power thyristors by local variation fo the current gain, Proc. EPE-MADEP, Florence, 393-395, 1991
13. F.-J.Niedernostheide, M.Schmitt, H.-J.Schulze, U.Kellner-Werdehausen, A.Frohnmeyer and G.Wachutka, Analysis of Radiation-Induced Defects and Performance Conditioning in High-Power Devices, Journal of The Electrochemical Society, 150 (1):G15-G21, 2003
14. L.C.Kimerling, H.M.Angelis and J.Diebold, On the Role of Defect Charge State in the Stability Point Defects in Silicon, Solid-State Communications, 16:171-174, 1975
15. Y.H.Lee, L.J.Cheng and J.D.Gerson, Carbon Interstitial in Electron-Radiated Silicon, Solid-State Communications, 21:109-111, 1977
16. S.K.Bains and P.C.Branbury, A bistable defect in electron-irradiated boron-doped silicon, J. Phys. C: Solid State Phys., 18:L109-L116, 1985
17. H.Bleichner, P.Jonsson, N.Keskitalo and E.Nordlander, Temperature and injection dependence of the Shockley-Read-Hall Lifetime in electron irradiated n-type silicon, Journal of Applied Physics, 79 (12):9142-9148, 1996
18. S.D.Brotherton and P. Bradley, Defect production and lifetime control in electron and γ-irradiated silicon, Journal of Applied Physics, 53 (8):5720-5732, 1982
19. P.G.Fuochi, E.Gombia, R.Mosca, F.Fasce, M.Icardi, M.Portesine and P.Rossetto, Electron Irradiation of Power Diodes. Comparison between FZ and MCZ Silicon Substrates, Proc. EPE-MADEP, 80-83, Firence, 1991
20. C.A.Londos, Defect states in electron-bombarded n-type Silicon, Physica Status Solidi, 113 (2):503-510, 1989
21. C.A.Londos and P.C.Branbury, Defect studies in electron-irradiated boron-doped silicon, J.Phys. C: Solid State Phys., 20:645-650, 1987
22. B.G.Svenson and M.Willander, Generation of divacancies in silicon irradiated by 2-MeV electrons: Depth and dose dependence, J.Appl. Phys., 62(7):2758-2762,1987
23. G.Ferenci, C.A.Londos, T.Pavelka and M.Somogyi, Correlation of the concentration of the carbon-associated radiation damage levels with the total carbon concentration in silicon, Journal of Applied Physics, 63 (1):183-189, 1988
24. A.Hallén, N.Keskatilo, F.Masszi and V.Nagl, Lifetime in Proton Irradiated Silicon, Journal of Applied Physics, 79(8):3906, 1996
25. P.Hazdra and J.Vobecký, Accurate Simulation of Fast Ion Irradiated Power Devices, Solid-State Electronics, 37:127-134, 1994
26. M.W.Hüppi, Protonenbestrahlung von Silizium: Vollständige elektrische Charakterisierung der erzeugten Rekombinationszentren, Ph.D. Thesis ETH Zürich, Zürich, 1989
27. K.Irmscher, Kapazitätsspektroskopische Analyse tiefer Störstellen in ionenimplantiertem Silizium, Ph.D. Thesis Humboldt-Universität, Berlin 1985
28. N.Keskitalo, Irradiation Induced Defects for Lifetime Control in Silicon, Ph.D. Thesis Uppsala University, Uppsala, 1997
29. W.Südkamp, DLTS-Untersuchung an tiefen Störstellen zur Einstellung der Trägerlebensdauer in Si-Leistungs-Halbleiterbauelementen, Ph.D. Thesis TU Berlin, Berlin, 1994
30. J.R.Troxell, Ion-Implantation associated defect production in silicon, Solid-State Electronics, 26 (6), 539-548, 1983
31. J.Vobecký, P.Hazdra and J.Homola, Optimization of power diode characteristics by means of ion irradiation, IEEE Transactions on Electron Devices, 43:2283-2289, 1996
32. R.Siemieniec, W.Südkamp and J.Lutz, Determination of parameters of radiation induced traps in silicon, Solid-State Electronics, 46 (6):891-901, 2002
33. R.Siemieniec, W.Südkamp and J.Lutz, Applying Device Simulation for Lifetime-Controlled Devices, Proc. ICCDCS, Aruba, 2002
34. H.-J.Schulze,A. Frohnmeyer, P.Tütto, T.Pavelka, and G. Wachutka. Carrier Lifetime Analysis by Photoconductance Decay and Free Carrier Absorption Measurements, Journal of the Electrochemical Society, 148 (11), G655-G661, 2001
35. J.Lutz, W.Südkamp and W.Gerlach, Impatt Oscillations in Fast Recovery Diodes due to Temporarily Charged Radiation-Induced Deep Levels, Solid-State Electronics, 42 (6):931-938, 1998
36. R.Siemieniec, J.Lutz and R.Herzer, Analysis of Dynamic Impatt Oscillations caused by Radiation Induced Deep Centers, Proc. ISPSD, Cambridge 2003
37. R.Siemieniec, M.Netzel, J.Lutz and P.Mourick, Transit Time Oscillations as a Source of EMC Problems in Bipolar Power Devices, Proc. EPE, Toulouse 2003
38. E.V.Monakhov, B.S.Avset, A.Hallen, and B.G.Svensson, Formation of a double acceptor center during divacancy annealing in low-doped high-purity oxygenated Si, Phys. Rev. B, 65:233207, 2002
39. I.Dudeck and R.Kassing, The influence of recombination data on the I-V characteristics of silicon p-i-n diodes, Journal of Applied Physics, 48(11):4786-4790, 1977
40. J.Guldberg, Electron trap annealing in neutron transmutation doped silicon, Appl. Phys. Lett., 31 (9):578, 1977
41. P.Hazdra, J.Rubeš and J.Vobecký, Divacancy profiles in MeV helium irradiated silicon from reverse I-V measurement, Nuclear Instruments and Methods in Physics Research, B 159, 207-217, 1999
42. K.Gill, G.Hall, and B.MacEvoy, Bulk damage effects in irradiated silicon detectors due to clustered divacancies, Journal of Applied Physics, 82:126-136, 1997
43. R.C.Newman, M.J.Ashwin, R.E.Pritchard, J.H.Tucker, Shallow thermal donors in silicon: The roles of Al, H, N and point defects, phys. star. sol. (b), 210:519-525, 1998
44. V.P.Markevich, T.Mchedlidze, M.Suezawa, L.I.Murin, EPR study of hydrogen-related radiation-induced donors in silicon, phys. stat. sol. (b), 210:545-549, 1998
45. J.Coutinho, R.Jones, P.R.Briddon, S.Öberg, L.I. Murin, V.P. Markevich, J.L. Lindström, Interstitial carbon-oxygen center and hydrogen-related shallow thermal donors in Si, Phys. Rev. B, 65:014109, 2001
46. J.Hartung and J.Weber, Shallow hydrogen-related donors in silicon, Phys. Rev. B, 48(11):14161, 1993