New punch through IGBT having a new N-buffer layer

Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)

Volumn 1, Issue , 1999, Pages 692-699

  Iwamoto, Hideo ^a   Haruguchi, Hideki ^a   Tomomatsu, Yoshifumi ^a   Donlon, John F ^a   Motto, Eric R ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER CIRCUITS; ELECTRIC BREAKDOWN; LEAKAGE CURRENTS; SEMICONDUCTING SILICON; SHORT CIRCUIT CURRENTS;

INSULATED GATE BIPOLAR TRANSISTOR; NON PUNCH THROUGH;

BIPOLAR TRANSISTORS;

EID: 0033355171     PISSN: 01972618     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)