Applying device simulation for lifetime-controlled devices

ICCDCS 2002 - 4th IEEE International Caracas Conference on Devices, Circuits and Systems

Volumn , Issue , 2002, Pages

  Siemieniec, R ^a   Sudkamp, W ^b   Lutz, J ^c  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^b Aktiv Sensor GmbH   (Germany)

^c CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE SIMULATIONS; DYNAMICAL CHARACTERISTICS; IRRADIATED DEVICES; POWER DEVICES; RECOMBINATION MODEL; TEMPERATURE DEPENDENCIES;

COMPUTER SIMULATION;

EID: 84900306634     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICCDCS.2002.1004041     Document Type: Conference Paper

References (7)

1. J. Lutz. Axial Recombination Center Technology' for Freewheeling Diodes, Proceedings of the 7th EPE, Trondheim, (1997)
2. J.Lutz, U.Scheuermann. Advantages of the New Controlled Axial Lifetime Diode, Proceedings of the 28th PCIM (1994)
3. D.V.Lang. Deep-level transient spectroscopy: A new method to characterize traps in semiconductors, Journal of Applied Physics, Vol.45, No.7, pp.3023-3032, July 1974
4. S.R.Lederhandler, L.J.Giacoletto. Measurement of Minority Carrier Lifetime and Surface Effects in Junction Devices, Proc. IRE, pp.477-483, April 1955
5. R.Siemieniec, D.Schipanski, W.Sudkamp, J.Lutz. Simulation and Experimental Results of Irradiated Power Diodes, Proc. EPE 1999
6. Lausanne R.Siemieniec, W.Sudkamp, J.Lutz. Determination of Parameters of Radiation Induced Traps in Silicon, accepted for publication in Solid-State Electronics Gajewski et al. TeSCA-Handbuch, WIAS Berlin, 1994
7. J.Vobecky, P.Hazdra, V.Zahlava. OCVD Lifetime of Ion Irradiated P-i-N Diodes, Proceedings of the ISPS'98, pp.47-52, Praha, 1998