Analysis of radiation-induced defects and performance conditioning in high-power devices

Journal of the Electrochemical Society

Volumn 150, Issue 1, 2003, Pages

  Niedernostheide, F J ^a   Schmitt, M ^a,c   Schulze, H J ^a   Kellner Werdehausen, U ^b   Frohnmeyer, A ^c   Wachutka, G ^c  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b Eupec GmbH   (Germany)

^c TECHNICAL UNIVERSITY OF MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE DIODES; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON IRRADIATION; HELIUM; MOSFET DEVICES; POSITIVE IONS; PROTON IRRADIATION; RADIATION EFFECTS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; THYRISTORS;

BLOCKING VOLTAGE; CARRIER LIFETIME; CARRIER TRAPPING EFFECTS; DEFECT PROFILING; HIGH POWER SEMICONDUCTOR DEVICES; RADIATION INDUCED DEFECTS; RADIATION INDUCED DOPING EFFECTS;

DEFECTS;

EID: 0037261128     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1524186     Document Type: Article

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