Impatt oscillations in fast recovery diodes due to temporarily charged radiation-induced deep levels

Solid-State Electronics

Volumn 42, Issue 6, 1998, Pages 931-938

  Lutz, J ^a   Sudkamp W ^b   Gerlach, W ^b  

^a Semikron Elektronik GmbH AndCo KG   (Germany)

^b Inst Mikro Festkorperelektronik   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRON IRRADIATION; HELIUM; MATHEMATICAL MODELS; OSCILLATIONS; THRESHOLD VOLTAGE;

FAST RECOVERY DIODES;

IMPATT DIODES;

EID: 0032090716     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00114-2     Document Type: Article

References (17)

1. Sze, S. M., Physics of Semiconductor Devices. New York, 1981.
2. Lutz, J. and Scheuermann, U., PCIM Proc., 1994, 163.
3. Sun, Y. E., IAS 77 Annual, 1977, 658.
4. Gebhard, H. and Heumann, K., EPE Proc. Firenze, 1991, 114.
5. Mourick, P. C., Das Abschalten von Leistungsdioden. Dissertation, TU-Berlin, 1988.
6. Irmscher, K., Klose, H. and Maas, K., J. Phys. C: Solid State Phys. A, 1984, 34(41), 6317.
7. Kimerling, L. C., Blood, P. and Gibson, W. M., Inst. Phys. Conf. Ser., 1979, 46, 273.
8. Hüppi, M. W., J. Appl. Phys., 1990, 68(6), 2702.
9. Wondrak, Erzeugung von Strahlenschäden in Silizium durch hochenergetische Elektronen und Protonen. Dissertation, Universität Frankfurt am Main, 1985.
10. Ferenzi, G., Londos, C. A., Pavelka, T., Somoggyi, M. and Mertens, A., J. Appl. Phys., 1988, 63(1).
11. Hallen, A. and Keskitalo, N., J. Appl. Phys., 1996, 79(8), 3906.
12. Lang, D. V., J. Appl. Phys., 1974, 45(7), 3023.
13. Shields, J., Journ. Electron. Control, 1959, 6, 130.
14. Fulop, W., Solid State Electron., 1967, 10, 39.
15. Singh, R. and Baliga, B. J., Solid State Electron., 1993, 36, 1206.
16. Pons, D. and Makram-Ebeid, S., J. Phys. (France), 1979, 40, 1161.
17. Hartke, J. L., J. Appl. Phys., 1968, 39, 4871.