Analysis of dynamic impatt oscillations caused by radiation induced deep centers

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2003, Pages 283-286

  Siemieniec, Ralf ^a   Lutz, Josef ^b   Herzer, Reinhard ^c  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^b CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^c Semikron Elektronik GmbH AndCo KG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC POTENTIAL; ELECTRON IRRADIATION; SEMICONDUCTOR JUNCTIONS;

CARRIER-LIFETIME CONTROL;

OSCILLATIONS;

EID: 0042014517     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. Lutz, J., Südkamp, W. and Gerlach, W.: Impatt Oscillations in Fast Recovery Diodes due to Temporarily Charged Radiation-Induced Deep Levels, Solid-State Electronics, 42 (6), 1998, 931-938
2. Domeij, M., Breitholtz, B., Åberg, D., Martinez, A. and Bergman, P.: Dynamic Avalanche and Trapped Charge in 4H-SiC Diodes, Proc. 8th Internat. Conf. on Silicon Carbide, III-Nitrides and Related Materials, Materials Science Forum, 1327, 338-342, 2000
3. Siemieniec, R., Lutz, J.: Axial Lifetime Control by Radiation Induced Centers in Fast Recovery Diodes, Proc. ISPS (Prague 2002), 83-90
4. Siemieniec, R., Südkamp, W. and Lutz, J.: Determination of Parameters of Radiation Induced Traps in Silicon, Solid-State Electronics, 46(6), 2002, 891-901
5. Fulop, W.: "Calculations of Avalanche Breakdown Voltages of Silicon pn-Junctions", Solid-State Electronics, 10, 1967, 39-42
6. Singh, R., Baliga, B.J.: "Analysis and optimization of power MOSFETs for cryogenic operation, Solid-State Electronics, 36(8), 1993, 1203-1211