Increasing the switching speed of high-voltage IGBTs

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Volumn , Issue , 1997, Pages 251-254

  Robb, Francine ^a   Wan, Irene ^a   Yu, Sophie ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CONTACTS; ION IMPLANTATION; MOSFET DEVICES; OPTIMIZATION; SEMICONDUCTOR DEVICE MANUFACTURE; SWITCHING THEORY;

BACKSIDE PROTON IMPLANTS; INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

BIPOLAR TRANSISTORS;

EID: 0030702464     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)