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Volumn 210, Issue 2, 1998, Pages 545-549

EPR study of hydrogen-related radiation-induced shallow donors in silicon

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EID: 0039491184     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-3951(199812)210:2<545::AID-PSSB545>3.0.CO;2-L     Document Type: Article
Times cited : (20)

References (21)
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    • YU.V. GORELKINSKII and N.N. NEVINNYI, Radiation Effects 71, 1 (1983); Nuclear Instrum. and Methods 209/210, 677 (1983); Physica B170, 155 (1991).
    • (1983) Nuclear Instrum. and Methods , vol.209-210 , pp. 677
  • 7
    • 0020737881 scopus 로고
    • YU.V. GORELKINSKII and N.N. NEVINNYI, Radiation Effects 71, 1 (1983); Nuclear Instrum. and Methods 209/210, 677 (1983); Physica B170, 155 (1991).
    • (1991) Physica , vol.B170 , pp. 155
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    • J. HARTUNG and J. WEBER, Phys. Rev. B 48, 14161 (1993); J. Appl. Phys. 77, 118 (1995).
    • (1995) J. Appl. Phys. , vol.77 , pp. 118
  • 15
    • 0004876068 scopus 로고    scopus 로고
    • V.P. MARKEVICH, L.F. MEDVEDEVA, and L.I. MURIN, in: Early Stages of Oxygen Precipitation in Silicon, Ed. R. JONES, Kluwer Academic Publishers, Dordrecht 1996; NATO ASI Series, 3. High Technology, Vol. 17, p. 103.
    • NATO ASI Series, 3. High Technology , vol.17 , pp. 103


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