A comparison of electron, proton and helium ion irradiation for the optimization of the CoolMOS™ body diode

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2002, Pages 229-232

  Schmitt, M ^a   Schulze, H J ^a   Schlogl A ^a   Vosseburger M ^a   Willmeroth, A ^a   Deboy, G ^a   Wachutka, G ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRON IRRADIATION; HELIUM; HIGH TEMPERATURE EFFECTS; ION BOMBARDMENT; LEAKAGE CURRENTS; MOS DEVICES; MOSFET DEVICES; OPTIMIZATION; PROTON IRRADIATION; SWITCHING; THRESHOLD VOLTAGE;

INTERNAL DIODES;

SEMICONDUCTOR DIODES;

EID: 0036051449     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

1. A now generation of high voltage MOSFETs breaks the limit line Of silicon
2. CoolMOS™ - A new milestone in high voltage power MOS
3. Optimization of the specific on-resistance of the CoolMOS™
4. An analytical model for the 3D-RESURF effect
5. Compensation devices versus power MOS and high speed IGBT - A device physics based guideline for the application
6. Temperature and injection dependence of the Shockley-Read-Hall lifetime in electron irradiated n-type silicon
7. Defect states in electron-bombarded silicon: Capacitance transient analyses
8. Buried recombination layers with enhanced n-type conductivity for silicon power devices
9. Nondestructive defect characterization and engineering in contemporary silicon power devices