Optimization of power diode characteristics by means of ion irradiation

IEEE Transactions on Electron Devices

Volumn 43, Issue 12, 1996, Pages 2283-2289

  Vobecký, Jan ^a   Hazdra, Pavel ^a   Homola, Jaroslav ^a  

^a CZECH TECHNICAL UNIVERSITY IN PRAGUE   (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; COMPUTER SIMULATION; ELECTRIC VARIABLES MEASUREMENT; HELIUM; IONS; IRRADIATION; OPTIMIZATION; SEMICONDUCTOR JUNCTIONS;

BIPOLAR POWER DIODE; HELIUM IRRADIATION; ION IRRADIATION;

SEMICONDUCTOR DIODES;

EID: 0030378203     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.544422     Document Type: Article

References (7)

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2. V. A. K. Temple and F. W. Holroyd, "Optimizing carrier lifetime profile for improved trade-off between turn-off time and forward drop," IEEE Trans. Electron Devices, vol. ED-30, pp. 782-790, 1983.
3. A. Hallén, M. Bakowski, and M. Lundqvist, "Multiple proton energy irradiation for improved GTO thyristors," Solid-State Electron., vol. 36, pp. 133-141, 1993.
4. R. Brammer, A. Hallén, and J. Håkansson, "Simulation of proton-induced local lifetime reduction in 10 kV diodes," IEEE Trans. Electron Devices, vol. 40, pp. 2089-2091, 1993.
5. P. Hazdra and J. Vobecký, "Modeling of localized lifetime tailoring in silicon devices," Simulation of Semiconduction Devices and Processes, vol. 5. Wien, Germany: Springer-Verlag, 1993, pp. 437-440.
6. _, "Accurate simulation of fast ion irradiated power devices," Solid-State Electron., vol. 37, pp. 127-134, 1994.
7. J. Vobecký, P. Hazdra, J. Voves, F. Spurný, and J. Homola, "Accurate simulation of combined electron and ion irradiated devices for local lifetime tailoring," in Proc. 6th Int. Symp. Power Semicon. Devices & IC's, Davos, 1994, pp. 265-270.