The reverse blocking IGBT for matrix converter with ultra-thin wafer technology

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2003, Pages 156-159

  Takei, M ^a   Naito, T ^a   Ueno, K ^a  

^a FUJI ELECTRIC CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; DIFFUSION; DIODES; ELECTRIC SWITCHES;

MATRIX CONVERTERS;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 0042941395     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. Mathieu Roy, Laurent Gonthier, and Christine Anceau,"The MBS (Mos Bidirectional Switch), a new MOS switch with reverse blocking voltage" EPE 99-Lausanne, 1999
2. M.Takei, Y.Harada, and K.Ueno, "600V-IGBT with Reverse Blocking Capability", ISPSD2001 Proceedings, pp.413, 2001
3. J.M.Neilson, F.J.Kub, K.D.Hobart, K.Brandmier, and M.Ancona, "Double-Side IGBT Phase Leg Architecture for Reduced Recovery Current and Turn-On Loss", ISPSD2002 Proceedings, pp.141, 2002
4. H.Hakim, J-L.Sanchez, J-P. Laur, P.Austin, M.Breil, "The Concave Junction: an Attractive Topology to Design Specific Junction Terminations", ISPSD2002 Proceedings, pp.193, 2002