Application of carrier lifetime control by irradiation to 1.2kV NPT IGBTs

Proceedings of the International Conference on Microelectronics

Volumn 24 I, Issue , 2004, Pages 167-170

  Siemieniec, Ralf ^a   Herzer, Reinhard ^b   Netzel, Mario ^a   Lutz, Josef ^c  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^b Semikron Elektronik GmbH AndCo KG   (Germany)

^c CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRON ENERGY LEVELS; ELECTRON IRRADIATION; GATES (TRANSISTOR); LEAKAGE CURRENTS; POISSON EQUATION; SILICON WAFERS;

BAND GAP; HOLE CURRENT CONTINUITY EQUATIONS; RADIATION INDUCED CENTERS;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 3142767486     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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