Photodetectors: UV to IR

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5246, Issue , 2003, Pages 375-388

  Campbell, Joe C ^a   Wang, Shuiling ^a   Zheng, Xiaoguang ^a   Li, Xioawei ^a   Li, Ning ^a   Ma, Feng ^a   Sun, Xiaoguang ^a   Collins, Charles J ^b   Beck, A L ^a   Yang, B ^a   Hurst, Jeffrey B ^a   Sidhu, Rubin ^a   Holmes Jr , Archie L ^a   Chowdhury, U ^a   Wong, Michael M ^a   Dupuis, Russell D ^a   Huntington, Andrew ^c   Coldren, Larry A ^c   Chen, Zhonghui ^d   Kim, Eui Tae ^d   Madhukar, Anupam ^d   more..

^a The University of Texas at Austin   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

^c University of California   (United States)

^d University of Southern California ^*  (United States)

Author keywords

Avalanche photodiode; Detectivity; Impact ionization; Infrared photodetector; Photoresponse; Quantum dot; Ultra violet photodiode

Indexed keywords

AVALANCHE PHOTODIODES; DETECTIVITY; INFRARED PHOTODETECTORS; PHOTORESPONSE; ULTRA-VIOLET PHOTODIODES;

AVALANCHE DIODES; CURRENT DENSITY; ENERGY GAP; GALLIUM NITRIDE; IMPACT IONIZATION; INFRARED DETECTORS; OPTICAL COMMUNICATION; PHOTOCATHODES; PHOTODIODES; PHOTOMULTIPLIERS; QUANTUM EFFICIENCY; SEMICONDUCTOR QUANTUM DOTS; SOLAR RADIATION;

ULTRAVIOLET DETECTORS;

EID: 1642473140     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.511201     Document Type: Conference Paper

References (59)

1. R. D. Dupuis and J. C. Campbell, "Ultraviolet Photodetectors Based Upon III N Materials," in Wide Energy Bandgap Electronic Devices, F. Ren and J. Zolper, Eds. (World Scientific Publishing Co., Inc., 2002), to be published.
2. J. Qu, J. Li, G. Zhang, Solid State Communications, 107, 467 (1998).
3. C. J. Collins, T. Li, A. L. Beck, R. D. Dupuis, J. C. Campbell, J. C. Carrano, M. J. Schurman, and I. A. Ferguson, Appl. Phys. Lett., 75, 2138 (1999).
4. T. Kashima, R. Nakamura, M. Iwaya, H. Katoh, S. Yamaguchi, H. Amano, and I. Akasaki, Jpn. J. Appl. Phys., 38, 1515 (1999).
5. P. Schreiber, T. Dang, T. Pickenpaugh, G. Smith, P. Geherd and C. Litton, Proc. SPIE, 3629, 230 (1999).
6. C. W. Litton, H. Morkoc, G. A. Smith, T. Dang, and P. J. Schreiber, to be published in Proc. Of 46th SPIE Symp., 4454, (2001).
7. D. J. H. Lambert, M. M. Wong, U. Chowdhury, C. J. Collins, T. Li, H. K. Kwon, B. S. Shelton, T.G. Zhu, J. C. Campbell and R. D. Dupuis, Appl. Phys. Lett., 77, 1900 (2000).
8. D. Walker, V. Kumar, K. Mi, P. Kung, X.H. Zhang, and M. Razeghi, Appl. Phys. Lett., 76, 403 (2000).
9. J. C. Campbell, C. J. Collins, M. M. Wong, U. Chowdhury, A. L. Beck, and R. D. Dupuis, Phys. Stat. Sol. (a) 188, No. 1, 283- 287 (2001).
10. G. Parish, M. Hansen, B. Morgan, S. Keller, S. P. DenBaars, U.K. Mishra, Phys. Stat. Sol. (a) 188, No. 1, 297-300 (2001).
11. E. J. Tarsa, P. Kozodoy, J. Ibbetson, B. P. Keller, G. Parish and U. Mishra, Appl. Phys. Lett., 77, 316 (2000).
12. 1-xN heterojunction pin photodiodes," Electron. Lett., vol. 38, pp.824-826 (2002).
13. For a recent treatment, see S. Donati, Photodetectors: Devices, Circuits, and Applications, (Prentice Hall, Upper Saddle River, NJ) 2000.
14. C. J. Collins, T. Li, D. J. H. Lambert, M. M. Wong, R. D. Dupuis, and J. C. Campbell, Appl. Phys. Lett., 77, 2810, (2000).
15. J. C. Campbell, S. Chandrasekhar. W. T. Tsang, G. J. Qua, and B. C. Johnson, "Multiplication noise of wide-bandwidth InP/InGaAsP/InGaAs avalanche photodiodes." J. Lightwave Technol., vol. 7, no. 3, pp. 473-477, 1989.
16. C. Hu, K. A. Anselm, B. G. Streetman, and J. C. Campbell, "Noise characteristics of thin multiplication region GaAs avalanche photodiodes," Appl. Phys. Lett., vol. 69, no. 24, pp. 3734-3736, 1996.
17. + diodes," IEEE Trans. Electron Dev., vol.45, no.10, pp.2102-7, 1998.
18. S. A. Plimmer, J. P. R. David, D. C. Herbert. T. W. Lee, G. J. Rees, P. A. Houston, R. Grey, P. N. Robson, A. W. Higgs, and D. R. Wight, "Investigation of Impact Ionization in Thin GaAs Diodes", IEEE Trans. Electron Dev., vol. 43, no. 7, pp. 1066-1072, 1996.
19. + diodes with electron initiated multiplication," IEEE Photon. Tech. Lett., vol.11, pp.364-366, 1999.
20. C. Lenox, P. Yuan, H. Nie, O. Baklenov, C. Hansing, J. C. Campbell, and B. G. Streetman, "Thin multiplication region InAlAs homojunction avalanche photodiodes," Appl. Phys. Lett., vol. 73, pp. 783-784, 1998.
21. C. Lenox, H. Nie, P. Yuan, G. Kinsey, A.L. Holmes, Jr., B.C. Streetman, J.C. Campbell, "Resonant-Cavity InGaAs/InAlAs Avalanche Photodiodes with Gain-Bandwidth-Product of 290 GHz," IEEE Photonics Technology Letters, vol.11, no. 9, pp. 1162-1164, 1999.
22. P. Yuan, H. Chad, K. A. Anselm, C. Lenox, H. Nie, H. L. Holmes, B. G. Streetman, and J. C. Campbell, "Impact Ionization Characteristics of III-V Semiconductors in a Wide Range of Multiplication Region Thickness," IEEE J. Quantum Electron., vol. 36, pp. 198-204, 2000.
23. 1-xAs Avalanche Photodiodes with High Al Concentration and Thin Multiplication Region," Appl. Phys. Lett., vol.78, no.24, pp.3833-5, 2001.
24. 0.4As Avalanche Photodiodes," IEEE Tran. Elec. Dev., vol. 48, no.7, pp. 1310-7, 2001.
25. P. Yuan, S. Wang, X. Sun, X. G. Zheng, A.L. Holmes, Jr., and J. C. Campbell, "Avalanche Photodiodes with an Impact-Ionization-Engineered Multiplication Region," IEEE Photonics Technology Letters, vol. 12, no. 10, pp. 1370-72, 2000.
26. Joe C. Campbell, Shuling Wang, X. G. Zheng, G.S. Kinsey, A. L. Holmes, Jr., X.Sun, R. Sidhu, and P. Yuan, "Ultra-Low-Noise Avalanche Photodiodes," Proc. SPIE, vol. 4283, pp.480-488, January 2001.
27. S. Wang, R. Sidhu, X.G. Zheng, X. Li, X. Sun, A. L. Holmes, Jr., and J.C. Campbell, "Low-Noise Avalanche Photodiodes With Graded Impact-Ionization-Engineered Multiplication Region," IEEE Photonics Technology Letters, vol.13, no. 12, pp. 1346-8, 2001.
28. S. Wang, F. Ma, R. Sidhu, X. G. Zheng, X. Sun, A. L. Holmes, Jr., and J. C. Campbell, "Ultra-low noise avalanche photodiodes with a 'centered-well' multiplication region," to be published.
29. F. Ma, S. Wang, X. Li, K.A. Anselm, X.G. Zheng, A. L. Holmes, Jr., and J. C. Campbell, "A Monte Carlo Simulation of Low-Noise Avalanche Photodiodes with Heterojunctions," Accepted for publication in J. Appl. Phys., 2002.
30. yAs for use in staircase avalanche photodiodes," J. Crystal Growth, vol. 180, pp. 9-14, 1997.
31. Y. Okuto and C. R. Crowell, "Ionization coefficients in semiconductors: A nonlocal property," Phys. Rev. B, vol. 10, pp. 4284-4296, 1974.
32. R.J. McIntyre, "Multiplication noise in uniform avalanche diodes," IEEE Trans. on Electron Dev., vol. 13, no. 1, pp. 164-168, 1966.
33. R. S. Balcerak, "3D imaging", 3D imaging Receivers SPIE Conference, April, 2000
34. G. S. Kinsey, J. C. Campbell, and A. G. Dentai, "Waveguide avalanche photodiode with a gain-bandwidth product of 320 GHz", IEEE Photonics Technology Letters, Vol. 13, Issue 8, 842-844, August 2001
35. H.S. Kim, J.H. Choi, H.M. Bang, Y. Jee, S.W. Yun, J. Burm, M.D. Kim, and A.G. Choo, "Dark current reduction in APD with BCB passivation", Electronics Letters, pp 455-457, 29, Vol. 37, no. 7, March 2001
36. 3F/HF etch a BCB passivation layer", Indium Phosphide and Related Materials, 2000 Conference Proceedings, Page 302-305
37. K. Makita, I. Watanabe, M. Tsuji, K. Taguchi, "150 GHz GB-Product and Low dark Current InAlGaAs Quaternary Well Superlattice Avalanche Photodiodes," Proc. IOOC-95, 1995
38. Cohen-Jonathan, C., Giraudet, L., Bonzo, A., and Praseuth, J. P.: 'Waveguide AlInAs/GaAlInAs avalanche photodiode with a gain-bandwidth product over 160GHz', Electron. Lett., 1997, vol. 33, no. 17, pp.1492-1493
39. Nie, H., Anselm, K. A., Lenox, C., Yuan, P., Hu, C., Kinsey, G., Streetman, B. G., and Campbell, J. C. "Resonant-cavity separate absorption, charge, and multiplication avalanche photodiodes with high speed and high gain-bandwidth product," IEEE Photon. Technol. Lett., 1998, vol. 10, no. 3, pp. 409-411
40. K. Kato, "Ultrawide-Band/High-frequency Photodetectors," IEEE Trans. on Microwave Theory and Techniques, Vol. 47, no. 7, 1265-1281, July 1999
41. 0.48As Avalanche Photodiode Array", to be published.
42. Kagawa, T., Kawamura, Y., and Iwamura, H., 'A wide-bandwidth low-noise InGaAsP-InAlAs superlattice avalanche photodiode with a flip-chip structure for wavelength of 1.3μm and 1.55μm', IEEE J. Quantum Electron., 1993, 29, pp 1387-1392
43. Makita, K., Watanabe, I., Tsuji, M., and Taguchi, K., "Dark current and breakdown analysis in In(Al)GaAs/InAlAs superlattice avalanche photodiodes", Jpn. J. Appl. Phys., 1996, 35, pp. 3440-3444.
44. K. J. William and R.D. Esman, "Large-signal compression-current measurements in high-power microwave pin photodiode," IEEE Photonics tech. lett., vol.35, 82-83 (1999).
45. N. Shimizu, N. Watanabe, T. Furuta, T. Ishibashi, "InP-InGaAs Uni-Traveling-Carrier Photodiode with Improved 3-dB Bandwidth of Over 150GHz", IEEE Photonics Tech. Lett., Vol. 10, 412-414 (1998).
46. F. J. Effenberger and A. M. Joshi, "Ultrafast, Dual-Depletion Region InGaAs/InP pin Detector", IEEE J. Lightwave Tech., Vol. 14, 1859-1864 (1996).
47. 0.47 Photodiode with partially depleted absorber", in proc. OFC'03, paper WF3.
48. K. Kato, S. Hata, K. Kawano, J. -I. Yoshida, and A. Kozen, "A High - Efficiency 50 GHz InGaAs Multimode Waveguide Photodetector," IEEE J. Quantum Electron., vol. 28, 2728-2735, (1992).
49. G. Unterbörsh, D. Trommer, A. Umbach, R. Ludwig, and H. G. Bach, "High-power performance of a high-speed photodetector," in Proc. ECOC'98, pp. 67-68.
50. S. Demiguel, L. Giraudet, L. Joulaud, J. Decobert, F. Blache, V. Coupé, F. Jorge, P. Pagnod-Rossiaux, E. Boucherez, M. Achouche, and F. Devaux, "Evanescently Coupled Photodiodes Integrating a Double Stage Taper for 40 Gb/s Applications - Compared Performance with Side-Illuminated Photodiodes," IEEE J. Lightwave Tech., Vol. 12, 2004-2014 (2002).
51. F. Xia, J. K. Thomson, M.R. Gokhale, P.V. Studenkov, J. Wei, W. Lin and S.R. Forrest, "An Asymmetric Twin-Waveguide High-Bandwidth Photodiode Using a Lateral Taper Coupler", IEEE Photonics Tech. Lett., Vol. 13, 845-847 (2001).
52. Stephane Demiguel, Ning Li, Xiaowei Li, Xiaoguang Zheng, Jooyong Kim, Joe C. Campbell, Hanfei Lu, and Alex Anselm, "Very high-responsivity evanescently-coupled photodiodes integrating a short multimode waveguide for high-speed applications", to be published.
53. Z.H. Chen, O. Baklenov, E. T. Kim, I. Mukhametzhanov, J. Tie, A. Madhukar, Z.M. Ye and J. C. Campbell, J. Appl. Phys. 89, 4558 (2001)
54. Z. M. Ye and J. C. Campbell, Z. H. Chen, E. T. Kim, and A. Madhukar, submitted to Appl. Phys. Lett.; Z.M. Ye, J. C. Campbell, Z.H. Chen, O. Baklenov, E. T. Kim, I. Mukhametzhanov, J. Tie, and A. Madhukar, Mat. Res. Soc. Symp. Proc. Vol. 692, H9.17.1, (2002)
55. Z. M. Ye and J. C. Campbell, Z. H. Chen, E. T. Kim, and A. Madhukar, submitted to Appl. Phys. Lett.; Z.M. Ye, J. C. Campbell, Z.H. Chen, O. Baklenov, E. T. Kim, I. Mukhametzhanov, J. Tie, and A. Madhukar, Mat. Res. Soc. Symp. Proc. Vol. 692, H9.17.1, (2002)
56. th IEEE Device Research Conference, (Denver, Colorado, June 19-21, 2000), p171; Z.H. Chen, O. Baklenov, E.T. Kim, I. Mukhametzhanov, J. Tie, A. Madhukar, Z. Ye, and J. Campbell, Proceedings of QWIP2000 Workshop, Dana Point, CA, July 2000, Infrared Physics & Technology, 42, 479 (2001)
57. th IEEE Device Research Conference, (Denver, Colorado, June 19-21, 2000), p171; Z.H. Chen, O. Baklenov, E.T. Kim, I. Mukhametzhanov, J. Tie, A. Madhukar, Z. Ye, and J. Campbell, Proceedings of QWIP2000 Workshop, Dana Point, CA, July 2000, Infrared Physics & Technology, 42, 479 (2001)
58. Zhengmao Ye, J. C. Campbell, Z. Chen, E.-T. Chen, and A. Madhukar, "Normal-incidence InAs self-assembled quantum-dot infrared photodetectors with high detectivity," IEEE J. Quantum Electron., vol. 38, pp. 1234-1237 (2002).
59. V. Ryzhii, Sci. Technol. 11, 759 (1996)