Resonant-cavity InGaAs-InAlAs avalanche photodiodes with gain-bandwidth product of 290 GHz

IEEE Photonics Technology Letters

Volumn 11, Issue 9, 1999, Pages 1162-1164

  Lenox, C ^a   Nie, H ^a   Yuan, P ^a   Kinsey, G ^a   Homles Jr , A L ^a   Streetman, B G ^a   Campbell, J C ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE DIODES; CAVITY RESONATORS; OPTICAL FIBERS; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

RESONANT-CAVITY AVALANCE PHOTODIODES (APD);

PHOTODIODES;

EID: 0032595644     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.784238     Document Type: Article

References (14)

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