Conservation of low dark current of InGaAs photodiodes after NH3F/HF etch with a BCB passivation layer

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2000, Pages 302-305

  Schmidt, D ^a   Trommer, D ^a  

^a FRAUNHOFER HEINRICH HERTZ INSTITUTE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BENZOCYCLOBUTENE; DARK CURRENT; WET ETCHING;

BUTENES; CURRENT DENSITY; DRY ETCHING; ELECTRIC CURRENT MEASUREMENT; METALLORGANIC VAPOR PHASE EPITAXY; ORGANIC COATINGS; PASSIVATION; PLASMA APPLICATIONS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

PHOTODIODES;

EID: 0033716851     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (8)

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