An asymmetric twin-waveguide high-bandwidth photodiode using a lateral taper coupler

IEEE Photonics Technology Letters

Volumn 13, Issue 8, 2001, Pages 845-847

  Xia, Fengnian ^a   Thomson, John K ^a   Gokhale, Milind R ^b   Studenkov, Pavel V ^b   Wei, Jian ^a   Lin, Wilson ^a   Forrest, Stephen R ^a  

^a Princeton University   (United States)

^b ASIP Inc   (United States)

Author keywords

Photonic integrated circuits; Waveguide photodiode

Indexed keywords

BANDWIDTH; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; OPTICAL WAVEGUIDES; PHOTOLITHOGRAPHY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SENSITIVITY ANALYSIS; SINGLE MODE FIBERS; WAVEGUIDE COUPLERS;

WAVEGUIDE PHOTODIODES;

PHOTODIODES;

EID: 0035424997     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.935823     Document Type: Article

References (9)

1. A high-efficiency 50 GHz InGaAs multimode waveguide photodetector
2. 110-GHz, 50%-efficiency mushroom-mesa waveguide p-i-n photodiode for a 1.55-μm wavelength
3. Monolithic integration of quantum-well laser and an optical amplifier using an asymmetric twin-waveguide structure
4. Efficient coupling in integrated twin-waveguide lasers using waveguide tapers
5. High-performance semiconductor optical preamplifier receiver at 10 Gb/s
6. Asymmetric twin-waveguide laser with a distributed Bragg reflector
7. Compact mode expanded lasers using resonant coupling between a 1.55-μm InGaAsP tapered active region and an underlying coupling guide
8. Waveguide integrated 1.55-μm photodetector with 45-GHz bandwidth