Microscopic investigation of Al0.43Ga0.57N on sapphire

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 38, Issue 12 B, 1999, Pages

  Kashima, Takayuki ^a   Nakamura, Ryo ^a   Iwaya, Motoaki ^a   Katoh, Hisaki ^a   Yamaguchi, Shigeo ^a   Amano, Hiroshi ^a   Akasaki, Isamu ^a  

^a MEIJO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRACK PROPAGATION; CRYSTAL MICROSTRUCTURE; DISLOCATIONS (CRYSTALS); FILM GROWTH; GRAIN SIZE AND SHAPE; LATTICE CONSTANTS; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

ALUMINUM GALLIUM NITRIDE; EDGE DISLOCATIONS; SCREW DISLOCATIONS; THREADING DISLOCATIONS;

SEMICONDUCTING FILMS;

EID: 0033326386     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.l1515     Document Type: Article

References (13)