Ultrafast, dual-depletion region, InGaAs/InP p-i-n detector

Journal of Lightwave Technology

Volumn 14, Issue 8, 1996, Pages 1859-1864

  Effenberger, F J ^a   Joshi, A M ^b  

^a DISCOVERY SEMICONDUCTORS INC   (United States)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRONS; LIGHT ABSORPTION; NUMERICAL METHODS; PERMITTIVITY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES;

PARASITIC CAPACITANCE; TRANSIT TIME;

PHOTODETECTORS;

EID: 0030214626     PISSN: 07338724     EISSN: None     Source Type: Journal    
DOI: 10.1109/50.532024     Document Type: Article

References (11)

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