Waveguide AllnAs/GaAllnAs avalanche photodiode with a gain-bandwidth product over 160GHz

Electronics Letters

Volumn 33, Issue 17, 1997, Pages 1492-1493

  Cohen Jonathan, C ^a   Giraudet, L ^a   Bonzo, A ^a   Praseuth, J P ^a  

^a ORANGE LABS   (France)

Author keywords

Avalanche photodiodes; Semiconductor superlattices

Indexed keywords

AVALANCHE DIODES; PHOTODIODES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR SUPERLATTICES;

SIDE-ILLUMINATED WAVEGUIDE STRUCTURE;

OPTOELECTRONIC DEVICES;

EID: 0031200470     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970988     Document Type: Article

References (6)

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2. SHISHIKURA, M., NAKAMURA, H., HATANANI, S., TANAKA, S., MIYAZAKI, T., and TSUJI, S.: 'An InAlAs/InGaAs superlattice avalanche photodiode with a waveguide structure'. Proc. 5th OEC, 1994, p. 68
3. KATO, K., HATA, S., KAWANO, K., YOSHIDA. J., and KOZEN, A.: 'A high-efficiency 50GHz InGaAs multimode waveguide photodetector', IEEE J. Quantum Electron., 1992, 28, (12), p. 2728-2735
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5. BARROU, T.: 'Photodiodes à avalanche à multi-puits quantiques AlInAs/GaInAs'. Thesis, Paris XI-University, 1995
6. TEICH, M.C., MATSUO, K., and SALEH, B.E.A.: 'Excess noise factor for conventional and superlattice avalanche photodiodes and photomultiplier tubes', IEEE J. Quantum Electron., 1986, QE-22, (8), p. 1184-1193