AlGaN/GaN heterostructure grown by metalorganic vapor phase epitaxy

Solid State Communications

Volumn 107, Issue 9, 1998, Pages 467-470

  Qu, Jianqin ^a   Li, Jing ^a   Zhang, Guoyi ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

A. semiconductor; B. crystal growth; B. epitaxy; Thin films

Indexed keywords

CRACK INITIATION; CRYSTAL GROWTH; INTERFACES (MATERIALS); MATHEMATICAL MODELS; METALLORGANIC VAPOR PHASE EPITAXY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; X RAY CRYSTALLOGRAPHY;

CRITICAL THICKNESS; CRYSTAL QUALITY; EPILAYERS; MATTHEW MODEL;

HETEROJUNCTIONS;

EID: 0032121059     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(98)00253-1     Document Type: Article

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