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IEEE Journal of Quantum Electronics

Volumn 38, Issue 9, 2002, Pages 1234-1237

Normal-incidence InAs self-assembled quantum-dot infrared photodetectors with a high detectivity

(5) Ye, Zhengmao a Campbell, Joe C a Chen, Zhonghui b Kim, Eui Tae b Madhukar, Anupam b

a The University of Texas at Austin (United States)

b UNIVERSITY OF SOUTHERN CALIFORNIA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRON TRANSITIONS; ETCHING; MOLECULAR BEAM EPITAXY; PHOTOLITHOGRAPHY; RAPID THERMAL ANNEALING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM DOTS; TRANSMISSION ELECTRON MICROSCOPY;

ALUMINUM GALLIUM ARSENIDE; INDIUM ARSENIDE; INTRABAND TRANSITIONS; SELF-ASSEMBLED QUANTUM DOT INFRARED PHOTODETECTOR; WET CHEMICAL ETCHING;

PHOTODETECTORS;

EID: 0036712188 PISSN: 00189197 EISSN: None Source Type: Journal
DOI: 10.1109/JQE.2002.802159 Document Type: Article

Times cited : (56)

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