High-crystallinity MOVPE-grown sawtooth-bandgap In1-x-yGaxAlyAs for use in staircase avalanche photodiodes

Journal of Crystal Growth

Volumn 180, Issue 1, 1997, Pages 9-14

  Tsuji, Masayoshi ^a   Makita, Kikuo ^a   Watanabe, Isao ^a   Taguchi, Kenko ^a  

^a NEC CORPORATION   (Japan)

Author keywords

APD; High field effect; III V semiconductor; InGaAlAs; Sawtooth bandgap

Indexed keywords

AVALANCHE DIODES; CRYSTAL LATTICES; ELECTRIC FIELD EFFECTS; ENERGY GAP; LIGHT ABSORPTION; METALLORGANIC VAPOR PHASE EPITAXY; MULTILAYERS; PHOTODIODES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH;

AVALANCHE PHOTODIODES; SAWTOOTH BAND GAP;

SEMICONDUCTING FILMS;

EID: 0031237315     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00183-8     Document Type: Article

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