Low multiplication noise thin Al0.6Ga0.4As avalanche photodiodes

IEEE Transactions on Electron Devices

Volumn 48, Issue 7, 2001, Pages 1310-1317

  Tan, C H ^a   David, J P R ^a   Plimmer, S A ^a   Rees, G J ^a   Tozer, R C ^a   Grey, R ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

AlxGa1 xAs; Avalanche photodiodes; Excess noise; Impact ionization

Indexed keywords

AVALANCHE DIODES; CHARGE CARRIERS; PHOTOIONIZATION; RECURSIVE FUNCTIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SPURIOUS SIGNAL NOISE; THIN FILMS;

AVALANCHE PHOTODIODES;

PHOTODIODES;

EID: 0035396490     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.930644     Document Type: Article

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