Demonstration of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with silicon-oxy-nitride as the gate insulator

Materials Science and Engineering: B

Volumn 119, Issue 1, 2005, Pages 36-40

  Balachander, K ^a,c   Arulkumaran, S ^a   Egawa, T ^a   Sano, Y ^b   Baskar, K ^c  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

^b OKI ELECTRIC INDUSTRY CO   (Japan)

^c ANNA UNIVERSITY   (India)

Author keywords

AlGaN; GaN; HEMT; MOSHEMT; Transconductance

Indexed keywords

ELECTRIC INSULATORS; GALLIUM COMPOUNDS; GATES (TRANSISTOR); HIGH ELECTRON MOBILITY TRANSISTORS; MOS DEVICES; NITRIDES; SILICON; TRANSCONDUCTANCE;

ALGAN; GAN; GATE INSULATORS; MOSHEMT;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 14944342691     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2005.01.005     Document Type: Article

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