Phosphorus and arsenic penetration studies through HfSixO y and HfSixOyNz films

Applied Physics Letters

Volumn 81, Issue 9, 2002, Pages 1609-1611

  Quevedo Lopez, M A ^a   El Bouanani, M ^a   Kim, M J ^a   Gnade, B E ^a   Wallace, R M ^a   Visokay, M R ^b   Li Fatou, A ^b   Bevan, M J ^b   Colombo, L ^b  

^a Center for Advanced Research and Technology   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL ETCHING; DEPTH PROFILE; DIFFUSIVITIES; DOPANT DIFFUSIVITY; LIMIT OF DETECTION; SI SUBSTRATES; SI(1 0 0);

ARSENIC; DIFFUSION; DOPING (ADDITIVES); GATE DIELECTRICS; GRAIN BOUNDARIES; PHOSPHORUS; POLYSILICON; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SILICON COMPOUNDS; SILICON OXIDES;

HAFNIUM COMPOUNDS;

EID: 79956040833     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1502910     Document Type: Article

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