Diffusion of boron, phosphorus, arsenic, and antimony in thermally grown silicon dioxide

Journal of the Electrochemical Society

Volumn 146, Issue 5, 1999, Pages 1879-1883

  Aoyama, Takayuki ^a   Tashiro, Hiroko ^a   Suzuki, Kunihiro ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY; ARSENIC; BORON; COMPUTER SIMULATION; CRYSTAL IMPURITIES; DIFFUSION IN SOLIDS; ION IMPLANTATION; PHOSPHORUS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SILICA;

PRE-EXPONENTIAL FACTOR;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0032638838     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1391859     Document Type: Article

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