Improvement of gate dielectric reliability for p+poly MOS devices using remote PECVD top nitride deposition on ultra-thin (2.4-6 nm) gate oxides

Microelectronics Reliability

Volumn 39, Issue 3, 1999, Pages 365-372

  Wu, Y ^a   Lucovsky, G ^b  

^a North Carolina State University   (United States)

^b NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE MEASUREMENT; DIELECTRIC DEVICES; ELECTRIC BREAKDOWN; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RELIABILITY; SPUTTER DEPOSITION; ULTRATHIN FILMS; VOLTAGE MEASUREMENT;

GATE DIELECTRICS;

MOS DEVICES;

EID: 0032624576     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(98)00244-3     Document Type: Article

References (24)

1. Lu Z., Santos-Fiho P., Stevens G., Williams J., Lucovsky G. Fourier transform infrared study of rapid thermal annealing of a-Si:N:H(D) films prepared by remote plasma-enhanced chemical vapor deposition. J Vac Sci Technol A. 13:1995;607.
2. 2 interfaces formed by a new, low-temperature, remote-plasma process. J Vac Sci Technol B. 13:1995;1778.
3. 2 interfaces. J Vac Sci Technol B. 14:1996;2832.
4. DiMaria D. Stress induced leakage current in thin oxide. Microelect Engng. 28:1995;63.
5. Lyding J., Hess K., Kizilyalli I. Reduction of hot electron degradation in metal oxide semiconductor transistors by deuterium. Appl Phys Lett. 68:1996;2526.
6. Hattangady S., Kraft R., Grider D., Douglas M., Brown G., Tiner P., Kuehne J., Nicollian P., Pas M. Ultra-thin nitrogen-profile engineered gate dielectric films. IEDM Tech Dig. 495:1996.
7. Wu Y., Lucovsky G. Ultrathin nitride/oxide (N/O) gate dielectrics for p±polysilicon gated PMOSFETs prepared by a combined remote plasma enhanced CVD/thermal oxidation process. IEEE Electron Dev Lett. 19:1998;367.
8. Ma Y., Yasuda T., Habermehl S., Lucovsky G. Fixed and trapped charges at oxide-nitride-oxide heterostructure interfaces formed by remote plasma enhanced chemical vapor deposition. J Vac Sci Tech B. 11:1993;1533.
9. Parker C.R., Lucovsky G., Hauser J. Ultrathin oxide-nitride gate dielectric MOSFETs. IEEE Electron Dev Lett. 19:1998;106.
10. Hu G., Bruce R. Design tradeoffs between surface and buried-channel FETs. IEEE Trans Electron Dev. ED-32:1985;584.
11. Wolf S. Silicon procession for the VLSI Era. vol. 3. Sunset Beach, CA: Lattice Press, 1995.
12. Pfiester J., Parrillo L., Baker F. Physical model for boron penetration through thin gate oxides from p+ polysilicon gates. IEEE Electron Dev Lett. 11:1990;247.
13. Mogami T., Johansson L., Sakai I., Fukuma M. Hot-carrier effects in surface-channel PMOSFET with BF2- or boron-implanted gates. IEDM Tech Dig. 533:1991.
14. Fair R. Modeling boron diffusion in ultra-thin nitrided oxide p+ Si gate technology. IEEE Electron Dev Lett. 18:1997;244.
15. 2O anneal. IEEE Electron Dev Lett. 15:1994;109.
16. Han L., Wristers D., Yan J., Bhat M., Kwong D. Highly suppressed boron penetration in NO-nitrided SiO2 for p±polysilicon gated MOS device application. IEEE Electron Dev Lett. 16:1995;319.
17. Wristers D., Han L., Chen T., Wang H., Kwong D. Degradation of oxynitride gate dielectric reliability due to boron diffusion. Appl Phys Lett. 68:1996;2094.
18. Chang C. General formalism for quantitative Auger analysis. Surface Sci. 48:1975;9.
19. Hattangady S., Niimi H., Lucovsky G. Controlled nitrogen incorporation at the gate oxide surface. Appl Phys Lett. 66:1995;3495.
20. Ma Y., Yasuda T., Lucovsky G. Ultrathin device quality oxide-nitride-oxide heterostructure formed by remote plasma enhanced chemical vapor deposition. Appl Phys Lett. 64:1994;2226.
21. 2O between 800 and 1200°C: incorporated nitrogen and interfacial roughness. Appl Phys Lett. 65:1994;848.
22. Pfiester J., Baker F., Mele T., Tseng H., Tobin P., Hayden J., Miller J., Gunderson C., Parrillo L. The effect of boron penetration on p+ polysilicon gated PMOS devices. IEEE Trans Electron Dev. 37:1990;1842.
23. Ma Y., Yasuda T., Lucovsky G. Formation of MIS devices with oxide-nitride-oxide dielectrics by low-temperature plasma-assisted processing and high temperature rapid thermal annealing. J Vac Sci Tech A. 11:1993;952.
24. Terry F., Wyatt P., Naiman M., Mathur B., Kirk C. High-field electron capture and emission in nitrided oxides. J Appl Phys. 57:1985;2036.