Thickness dependence of boron penetration through o2- and n2o-grown gate oxides and its impact on threshold voltage variation

IEEE Transactions on Electron Devices

Volumn 43, Issue 6, 1996, Pages 982-990

  Krisch, K S ^a   Green, M L ^a   Baumann, F H ^a   Brasen, D ^a   Feldman, L C ^b   Manchanda, L ^b  

^a LUCENT TECHNOLOGIES   (United States)

^b VANDERBILT UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CAPACITORS; MATHEMATICAL MODELS; MOS DEVICES; NITROGEN OXIDES; OXIDATION; SEMICONDUCTING BORON; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; ULSI CIRCUITS; VOLTAGE CONTROL;

AMMONIA ANNEALING; CHANNEL DOPING; DIELECTRIC SILICON INTERFACE; MOS CAPACITOR MEASUREMENT; NUCLEAR REACTION ANALYSIS; POLYSILICON; RAPID THERMAL OXIDATION; THRESHOLD VOLTAGE;

DIELECTRIC MATERIALS;

EID: 0030164848     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.502134     Document Type: Article

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