Characterization of the temperature sensitivity of gain and recombination mechanisms in 1.3-μm AlGaInAs MQW lasers

IEEE Journal of Quantum Electronics

Volumn 41, Issue 2, 2005, Pages 132-139

  Houle, T J ^a,b   Yong, J C L ^a   Marinelli, C M ^a,c   Yu, S ^a   Rorison, J M ^a   White, I H ^a,c   White, J K ^d   SpringThorpe, A J ^d,e   Garrett, B ^d  

^a UNIVERSITY OF BRISTOL   (United Kingdom)

^b Shusaku Yamamoto   (Japan)

^c UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^d Bookham Technology   (Canada)

^e NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

1.3 m AlGaInAs active layer materials; High temperature performance; Infrared sources; Laser gain; Quantum well (QW) lasers; QW material system

Indexed keywords

CARRIER CONCENTRATION; CURRENT DENSITY; ELECTRIC IMPEDANCE MEASUREMENT; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; THERMAL EFFECTS;

CARRIER LIFETIME; OPTICAL GAIN; THRESHOLD CURRENT; TRANSPARENCY CURRENT DENSITY;

QUANTUM WELL LASERS;

EID: 13444266440     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2004.840450     Document Type: Article

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