Material gain comparison for InGaAsP, AlGaInAs and InGaAsN for 1.3 micron laser diode

Conference on Lasers and Electro-Optics Europe - Technical Digest

Volumn , Issue , 2001, Pages 479-480

  Yong, J C L ^a   Rorison, J M ^a   Penty, R V ^a   White, I H ^a  

^a UNIVERSITY OF BRISTOL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRON TRANSITIONS; ELECTRONIC DENSITY OF STATES; ENERGY GAP; GAIN MEASUREMENT; LASER APPLICATIONS; PHOTONS; PROBABILITY; SECOND HARMONIC GENERATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR LASERS; THRESHOLD VOLTAGE;

CONDUCTION BANDS;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 0034805240     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/cleo.2001.948067     Document Type: Conference Paper

References (7)

1. Study of the temperature dependence of 1.3 micron AlGaInAs-Inp multiple-quantum well lasers
2. GaInAs: A novel material for long-wavelength-range laser diodes with excellent high-temperature performance
3. Optical gain in III-V bulk and quantum well semiconductors
4. Electronic states and band alignment in GaInNAs/GaAs quantum-well structures with low nitrogen content